Extended-$\hbox{p}^{+}$ Stepped Gate LDMOS for Improved Performance
نویسندگان
چکیده
منابع مشابه
A New Improved Model for LDMOS Transistors under Different Gate and Drain Bias Conditions
The behaviour of the capacitances of LDMOS devices as a function of gate and drain bias is analysed using TCAD simulations and S-parameter measurements. Both simulations and measurements revealed that instead of the smooth sigmoïd shape usually seen in MOSTs, the capacitances of LDMOS devices show a distinct ridge at low values of Vds. A full analysis of this phenomena is used to propose a sign...
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ژورنال
عنوان ژورنال: IEEE Transactions on Electron Devices
سال: 2010
ISSN: 0018-9383,1557-9646
DOI: 10.1109/ted.2010.2049209